ksh50 2 2 7 KSH5027 KSH5027 semihow rev.a0,oct 2007
ksh50 2 2 7 high voltage and high reliability KSH5027 high voltage and high reliability - high speed switching - wide soa characteristics symbol rating unit collector-base voltage collector emitter voltage v cbo v 1100 800 v v absolute maximum ratings tc=25 unless otherwise noted to-220 1. base 2. collector 3. emitter 3 amperes npn silicon power transistor 50 watts collector - emitter voltage emitter-base voltage collector current(dc) collector current(pulse) base current collector dissipation(tc=25 ) junction temperature storage temperature v ceo v ebo i c i cp i b p c t j t stg 800 7 3 10 1.5 50 150 -55~150 v v a a a w 1 2 3 characteristics symbol test condition min typ. max unit collector-base breakdown voltage v cbo i c =1ma, i e =0 1100 v collector-emitter breakdown voltage v ceo i c =5ma, i b =0 800 v emitter-base breakdown voltage v ebo i e =1ma, i e =0 7 v electrical characteristics tc=25 unless otherwise noted collector-emitter sustaining voltage i cex (sus) i c =1.5a, i b1 =-i b2 =0.3a l=2mh, clamped 800 v collector cut0off current i cbo v cb =800v,i e =0 10 ? emitter cutoff current i ebo v eb =5v,i c =0 10 ? dc current gain h fe1 h fe2 v ce =5v,i c =0.2a v ce =5v,i c =1a 10 8 40 collector-emitter saturation voltage v ce(sat) i c =1.5a,i b =0.3a 2 v base-emitter saturation voltage v be(sat) i c =1.5a,i b =0.3a 1.5 v output capacitance c ob v cb =10v,i e =0, f=0.1mhz 60 ? current gain bandwidth product f t v ce =10v,i c =0.2a 15 ? turn on time t on vcc=400v, ic=5a i b1 =-2.5a, i b2 =2a r l =200 ? 0.5 ? storage time t stg 3.0 ? fall time t f 0.3 semihow rev.a0,oct 2007 fall time t f 0.3 ? h fe1 classification r :10 ~ 20, o : 15 ~ 30, y : 20 ~ 40
ksh50 2 2 7 typical characteristics figure 1. static characteri stic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation figure 4. base-emitter on voltage figure 5. switching time figur e 6. safe operating area semihow rev.a0,oct 2007
ksh50 2 2 7 typical characteristics ( continued ) figure 7. reverse bias operati ng area figure 8. power derating semihow rev.a0,oct 2007
ksh50 2 package dimension 2 7 0 990 020 450 to to- -220 (a) 220 (a) 3 . 6 0 0 . 2 0 9 . 90 0 . 20 0 0.20 1.30 0.20 4 . 50 0.20 9.19 0.20 2.80 0.20 15.70 0.20 6.5 0 1 3.08 0.20 3 .02 0.20 1.27 0.20 1.52 0.20 2.40 0.20 1 3 2.54typ 0.80 0.20 0.50 0.20 2.54typ semihow rev.a0,oct 2007 dimensions in millimeters
ksh50 2 package dimension 2 7 to to- -220 (b) 220 (b) 0.20 0.20 1.27 0.20 4.57 0.20 3.8 4 0 . 2 0 2.74 0.20 15.44 0.20 6.30 9.14 0.20 3 .28 0.20 6 7 0.20 1.27 0.20 2.67 0.20 1 3 2. 6 0.81 0.20 0.40 0.20 2.54typ 2.54typ semihow rev.a0,oct 2007 dimensions in millimeters
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